Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. (20th August 2021)

• Record Type: Journal Article
• Authors: Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Zakhar R; Balakrishnan, Nilanthy; Makarovsky, Oleg; Kovalyuk, Zakhar D; Castanon, Eli G; Kolosov, Oleg; Wang, Kaiyou; Patanè, Amalia
• Is Part Of: 2D materials. Volume 8:Number 4(2021)
• Publication Date: 2021-08-20
• Subjects: ferroelectrics -- semiconductors -- two-dimensional materials -- electron transport -- photoresponse; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/ac1ada
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α -In2 Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2 Se3 layer modulates the transmission of electrons across the graphene/In2 Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.