Cite
HARVARD Citation
Yang, J. et al. (2021). Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control. Advanced Electronic Materials. p. n/a. [Online].
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Yang, J. et al. (2021). Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control. Advanced Electronic Materials. p. n/a. [Online].