Study of J-E Curve with Hysteresis of Carbon Nanotubes Field Emitters. (16th August 2012)

• Record Type: Journal Article
• Authors: Parveen, Shama; Husain, Samina; Kumar, Avshish; Ali, Javid; Harsh, ; Husain, Mushahid
• Other Names: Escrig J. Academic Editor.; Jin G. Academic Editor.; Kajbafvala A. Academic Editor.
• Is Part Of: ISRN nanomaterials. Volume 2012(2012)
• Publication Date: 2012-08-16
• Subjects: Nanostructured materials -- Periodicals; Nanostructured materials; Electronic journals; Periodicals; 620.115
• DOI: 10.5402/2012/971854
• Languages: English
• ISSNs: 2090-8741

Abstract

Abstract : We observe hysteresis in J-E plot during field emission measurement of CNTs grown by LPCVD technique. CNTs are synthesized on Fe-coated Si substrate at 650°C. SEM and Raman study confirm that CNTs are successfully grown on Si substrate by LPCVD technique. In this study, we find that ramp-down curve has higher value of current density than ramp-up curve which indicates that CNTs show positive hysteresis. Our results show that a high current density at low turn-on voltage is obtained in ramp-down step of J-E plot which may be since not all CNTs contribute in ramp-up step process. But in ramp-down step all CNTs contribute as field emitters due to high electric field treatment. We also performed stability analysis of CNTs with current at constant applied voltage for 5 hrs and find that the sample shows long-term stability due to increase in emitting site density since a large number of CNTs participate in field emission.