Solution-processed BiFeO3 thin films with low leakage current. Issue 13 (October 2021)

• Record Type: Journal Article
• Authors: Blázquez Martínez, Alfredo; Godard, Nicolas; Aruchamy, Naveen; Milesi-Brault, Cosme; Condurache, Oana; Bencan, Andreja; Glinsek, Sebastjan; Granzow, Torsten
• Is Part Of: Journal of the European Ceramic Society. Volume 41:Issue 13(2021)
• Page Start: 6449
• Page End: 6455
• Publication Date: 2021-10
• Subjects: BiFeO3 -- Ferroelectric -- Chemical solution deposition -- Thin film -- Multiferroic; Ceramic materials -- Periodicals; Composite materials -- Periodicals; Matériaux céramiques -- Périodiques; Composites -- Périodiques; Ceramic materials; Composite materials; Periodicals; Electronic journals; 666.05
• DOI: 10.1016/j.jeurceramsoc.2021.05.051
• Languages: English
• ISSNs: 0955-2219

Abstract

Highlights: [100]pc BiFeO3 thin films are grown on platinized silicon substrates with solution-based process using a PbTiO3 seed layer. The use of the PbTiO3 seed layer results in films with larger grain size and Lotgering factors up to 0.98 for the [100]pc direction. The use of the PbTiO3 seed layer results in a reduction of the undesired leakage current in the high electric field region. Outstanding low-frequency (300 Hz) properties with Pr values of 50 μC/cm 2 are achieved. Abstract: Bismuth ferrite (BiFeO3 ) is an attractive multiferroic material that shows strong ferroelectric and antiferromagnetic properties. Nevertheless, producing high-quality oriented BiFeO3 on technology-important platinized silicon substrates by low-cost solution deposition methods is still challenging. In this work, polycrystalline Mn and Ti co-doped BiFeO3 (BFO) thin films were fabricated on platinized silicon substrates by a solution deposition method. PbTiO3 nanocrystals were used as a seed layer between the electrode and the BFO thin films to induce a preferential (100) pseudocubic orientation. We show that the introduction of a PbTiO3 seed layer strongly reduces the leakage current. The films show excellent room-temperature ferroelectric properties at low frequencies (300 Hz), with epitaxial-like remanent polarization as high as 51 μC/cm 2 and coercive field of 500 kV/cm.