In‐plane crystalline anisotropy of bulk β‐Ga2O3. Issue 4 (29th July 2021)

• Record Type: Journal Article
• Authors: Ma, Xiaocui; Xu, Rui; Xu, Jianfang; Ying, Leiying; Mei, Yang; Long, Hao; Zhang, Baoping
• Is Part Of: Journal of applied crystallography. Volume 54:Issue 4(2021)
• Page Start: 1153
• Page End: 1157
• Publication Date: 2021-07-29
• Subjects: gallium oxide -- in‐plane anisotropy -- X‐ray diffraction -- Williamson–Hall analysis; Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S1600576721006427
• Languages: English
• ISSNs: 0021-8898

Abstract

Abstract : A new anisotropy characteristic of bulk (2 01) β‐Ga2 O3 is presented. The broadening of symmetric rocking curves indicates `twofold' anisotropy with a maximum along the [102] direction. Williamson–Hall analysis reveals that this is induced by anisotropy in the length over which the crystal structure is not disrupted by grain boundaries or stacking faults, which we term `lateral limited size'. The lateral limited size is governed by {200} stacking faults along the [102] direction and grain boundaries along the [010] direction. Abstract : The anisotropy of X‐ray diffraction scanning of (2 01) β‐Ga2 O3 bulk material has been investigated. Symmetric rocking curves (RCs) exhibit distinctly different broadening along different azimuths, with a maximum along [102] and a minimum along a direction rotated by 30° from [010]. Williamson–Hall analysis was applied to study possible factors causing the broadening in these RCs, including instrumental factors, mosaic tilt and coherent scattering. It was found that the RC broadening is determined by both isotropic mosaic tilt and anisotropy in the length over which the crystal structure is not disrupted by limiting factors such as grain boundaries or stacking faults, which we term the `lateral limited size'. In this case, the lateral limited size is governed by {200} stacking faults along the [102] direction and grain boundaries along the [010] direction. The result presents a new anisotropy characteristic of (2 01) β‐Ga2 O3 .