Elucidating Ionic Programming Dynamics of Metal‐Oxide Electrochemical Memory for Neuromorphic Computing (Adv. Electron. Mater. 8/2021). (12th August 2021)

• Record Type: Journal Article
• Authors: Jeong, Yangho; Lee, Hyunjoon; Ryu, Da Gil; Cho, Seong Ho; Lee, Gawon; Kim, Sangbum; Kim, Seyoung; Lee, Yun Seog
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 8(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-08-12
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202170034
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Electrochemical Memory Devices In article number 2100185, Seyoung Kim, Yun Seog Lee, and coworkers reveal the ionic programming mechanism in metal‐oxide based electrochemical memory devices with ionic migration and diffusion model. Exploiting the operating mechanism, this memory device can achieve highly linear and symmetric conductance response as well as a programming selectivity. The highly linear and selectorless programming promotes the advent of large‐scale arrays for neuromorphic computing.