Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application. (9th August 2021)

• Record Type: Journal Article
• Authors: Saito, Yoshiki; Wada, Satoshi; Nagata, Kengo; Makino, Hiroaki; Boyama, Shinya; Miwa, Hiroshi; Matsui, Shinichi; Kataoka, Keita; Narita, Tetsuo; Horibuchi, Kayo
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 8(2021)
• Publication Date: 2021-08-09
• Subjects: AlGaN base LED -- UV-LED -- degeneracy -- SARS-CoV-2 -- inactivation; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac10f2
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) are key components for the inactivation of viruses. Highly efficient and high-power UV-LEDs, capable of inactivating viruses in a short time, are in demand. For this purpose, the growth technologies of n-type AlGaN contact layers were developed from two points of view: first, to decrease the resistivity of n-type Al0.62 Ga0.38 N by minimizing the electron compensation, resulting in electronic degeneracy with metallic conduction; second, to improve the light emission uniformity in AlGaN multiquantum wells (MQWs) by controlling the morphology of the underlying n-type AlGaN layer to inhibit macrostep formation. A UV-LED module emitting at 275 nm was demonstrated with the developed growth technology, and illuminated with an irradiation power of 2.6 mW cm −2 on SARS-CoV-2 samples. Over 99.999 % of viruses were inactivated within 5 s owing to the high power of this module.