Impacts of band alignment change after interface nitridation on the leakage current of SiO2/4H-SiC (0001) and (11̄00) MOS capacitors. (3rd August 2021)

• Record Type: Journal Article
• Authors: Kil, Tae-Hyeon; Tamura, Atsushi; Shimizu, Sumera; Kita, Koji
• Is Part Of: Applied physics express. Volume 14:Number 8(2021)
• Publication Date: 2021-08-03
• Subjects: SiC -- MOS capacitors -- Band alignment -- Fowler–Nordheim tunneling -- Poole–Frenkel emission; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac16b9
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The band alignments and leakage currents were investigated after post-oxidation annealing in NO ambient (NO-POA) for SiO2 /4H-SiC (0001) and ( 1 1 ̄ 00 ) metal-oxide-semiconductor capacitors. Significant increase in conduction band offset was observed after NO-POA on SiO2 /4H-SiC (0001) interface whereas decrease on SiO2 /4H-SiC ( 1 1 ̄ 00 ) interface, which would be related to different dipoles direction on (0001) and ( 1 1 ̄ 00 ) faces, respectively. We found that leakage currents originated by both Fowler–Nordheim tunneling and Poole–Frenkel emission were significantly higher on ( 1 1 ̄ 00 ) than on (0001) after NO-POA at elevated temperatures, indicating that band alignment should be considered as important factor to employ various crystal faces for power devices.