Impact of the positive electron–hole exchange interaction constant on the binding energy of neutral donor bound excitons in AlN. (3rd August 2021)

• Record Type: Journal Article
• Authors: Ishii, Ryota; Yoshikawa, Akira; Kobayashi, Hirotsugu; Funato, Mitsuru; Kawakami, Yoichi
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 8(2021)
• Publication Date: 2021-08-03
• Subjects: donor bound excitons -- donor binding energy -- aluminum nitride -- photoluminescence -- doping; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac15ae
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Low-temperature photoluminescence spectroscopy is performed for unintentionally doped and silicon-doped aluminum nitride (AlN) films grown on AlN substrates. Considering the positive electron–hole exchange interaction constant substantially changes the neutral silicon-donor bound exciton binding energy from 28.5 to 15.3 meV. The silicon-donor binding energy is also experimentally deduced as 64.8 meV from a two-electron transition, which is justified by a theoretical calculation considering the crystal anisotropy and electron–phonon coupling. The estimated binding energies are discussed with a previous theoretical result within the effective mass approximation and the experimentally known binding energy of elementary four-particle (three-particle) systems.