Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal–insulator–metal applications. (14th December 2015)

• Record Type: Journal Article
• Authors: Choi, Kyeong-Keun; Park, Chan-Gyung; Kim, Deok-kee
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 1(2016:Jan.)
• Publication Date: 2015-12-14
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.016502
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition were investigated for through-silicon via (TSV) and metal–insulator–metal applications at temperatures below 300 °C. ZrO2 films were able to be conformally deposited on the scallops of 50-µm-diameter, 100-µm-deep TSV holes. The mean breakdown field of 30-nm-thick ZrO2 films on 30-nm-thick Ta(N) increased about 41% (from 2.7 to 3.8 MV/cm) upon H2 plasma treatment. With the plasma treatment, the breakdown field of the film increased and the temperature coefficient of capacitance decreased significantly, probably as a result of the decreased carbon concentration in the film.