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HARVARD Citation
Yokoyama, Y. et al. (n.d.). Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy. Japanese journal of applied physics. p. . [Online].
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Yokoyama, Y. et al. (n.d.). Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy. Japanese journal of applied physics. p. . [Online].