Crystal structure, luminescence, and thermal stability of CsAlSi2O6:Tb3+ phosphors with highly efficient green emission. (November 2021)

• Record Type: Journal Article
• Authors: Shimono, Seiya; Izaki, Taichi; Tanaka, Nagisa; Nanai, Yasushi; Morimoto, Takaaki; Kishimura, Hiroaki; Aruga, Atsushi
• Is Part Of: Materials research bulletin. Volume 143(2021)
• Publication Date: 2021-11
• Subjects: phosphors -- solid-state reaction -- luminescence -- photoelectron spectroscopy -- X-ray diffraction; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2021.111441
• Languages: English
• ISSNs: 0025-5408

Abstract

Highlights: Tb 3+ -doped pollucite (Cs1 - 3 x Tb x )AlSi2 O6 ( x = 0.01–0.13) phosphors were synthesized Excitation/emission spectra (~543 nm) showed green emission from 5 D4 → 7 F5 transition Optimum Tb 3+ doping concentration x = 0.07 and QE value is 83.6% For x = 0.07, 92.7%/78.4% of emission intensity at 300 K retained at 400/500 K Green light-emitting phosphors have potential in UV-C excited w-LEDs Abstract: Green-emitting Tb 3+ -doped pollucite (Cs1-3 x Tb x )AlSi2 O6 ( x = 0.01–0.13) phosphors were synthesized by the high-temperature solid-state reaction method. Structural characterization of the prepared (Cs1 - 3 x Tb x )AlSi2 O6 phosphors was performed using powder X-ray diffraction and X-ray photoelectron spectroscopy. The excitation and emission spectra showed green emission at ~543 nm because of the 5 D4 → 7 F5 transition under excitation at 238 nm. The optimum doping concentration of the Tb 3+ ions was x = 0.07, and the quantum efficiency was 83.6%. The temperature dependence of emission spectra for x = 0.07 revealed that 92.7% and 78.4% of the initial value of the emission intensity at 300 K are retained at 400 K and 500 K, respectively. These results show that the green-emitting phosphors synthesized herein have good performance and potential applications in ultraviolet-C excited white light-emitting diodes. Graphical abstract: Image, graphical abstract