Cite
HARVARD Citation
Khan, M. et al. (2021). Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel. Materials science in semiconductor processing. p. . [Online].
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Khan, M. et al. (2021). Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel. Materials science in semiconductor processing. p. . [Online].