Cite
HARVARD Citation
Zhang, J. et al. (2021). Injection enhanced SiC planar gate IGBT with partial Schottky contact emitter. Materials science in semiconductor processing. p. . [Online].
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Zhang, J. et al. (2021). Injection enhanced SiC planar gate IGBT with partial Schottky contact emitter. Materials science in semiconductor processing. p. . [Online].