Self-compensation effect in Si-doped Al0.55Ga0.45N layers for deep ultraviolet applications. (17th April 2015)

• Record Type: Journal Article
• Authors: Pyeon, Jaedo; Kim, Jinwan; Jeon, Minhwan; Ko, Kwangse; Shin, Eunyoung; Nam, Okhyun
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 5(2015:May)
• Publication Date: 2015-04-17
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.051002
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The self-compensation effect in Si-doped Al0.55 Ga0.45 N layers was investigated using different SiH4 /III ratios. The degree of compressive strain changed with SiH4 flow rate during growth. With a low SiH4 /III ratio of 2.46 × 10 −6, compressive strain was increased in comparison with the un-doped case. However, above this SiH4 /III ratio, compressive strain decreased from ε xx = −5.07 × 10 −3 to 4.28 × 10 −3 when the ratio was increased to 4.1 × 10 −5 . For higher SiH4 /III ratios, the compressive strain again increased, which is attributed to the self-compensation effect of Si atoms. A similar tendency was observed in Photo-luminescence (PL) results. While the UV-to-violet ratio ( I UV / I VL ) of room-temperature PL remained to be almost constant for SiH4 /III ratios below 8.2 × 10 −5, I UV / I VL decreased rapidly above this value, as a result of self-compensation of Si atoms. These results were in good agreement with the Hall effect measurements.