Fabrication of GaAs/AlAs micro-pillar cavities including low-density InAs quantum dots and their photoluminescence properties. (28th April 2015)
- Record Type:
- Journal Article
- Title:
- Fabrication of GaAs/AlAs micro-pillar cavities including low-density InAs quantum dots and their photoluminescence properties. (28th April 2015)
- Main Title:
- Fabrication of GaAs/AlAs micro-pillar cavities including low-density InAs quantum dots and their photoluminescence properties
- Authors:
- Yamashita, Hiroyuki
Kawamoto, Noriyuki
Ogawa, Yoshihide
Yamaguchi, Koichi - Abstract:
- Abstract: Low-density InAs quantum dots (QDs) were grown by intermittent supply method in molecular beam epitaxy. QD density was controlled in a wide range of 10 6 to 10 9 cm −2 by in-situ monitoring of RHEED specular-beam intensity. Low-density InAs QDs were embedded into GaAs/AlAs micro-pillar cavity structure, which was fabricated by anisotropic wet-etching through a conventional photoresist mask. Photoluminescence (PL) spectra of single InAs QD in the micro-cavity were analyzed, and its PL intensity was three times higher than that without the cavity.
- Is Part Of:
- Japanese journal of applied physics. Volume 54:Number 6(2015:Jun.)Supplement 1
- Journal:
- Japanese journal of applied physics
- Issue:
- Volume 54:Number 6(2015:Jun.)Supplement 1
- Issue Display:
- Volume 54, Issue 6, Part 1 (2015)
- Year:
- 2015
- Volume:
- 54
- Issue:
- 6
- Part:
- 1
- Issue Sort Value:
- 2015-0054-0006-0001
- Page Start:
- Page End:
- Publication Date:
- 2015-04-28
- Subjects:
- Physics -- Periodicals
621.05 - Journal URLs:
- http://iopscience.iop.org/1347-4065/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.7567/JJAP.54.06FH03 ↗
- Languages:
- English
- ISSNs:
- 0021-4922
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 18360.xml