Density of states of short channel amorphous In–Ga–Zn–O thin-film transistor arrays fabricated using manufacturable processes. (13th April 2015)

• Record Type: Journal Article
• Authors: Kim, Soo Chang; Kim, Young Sun; Kanicki, Jerzy
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 5(2015:May)
• Publication Date: 2015-04-13
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.051101
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The effect of temperature on the electrical characteristics of the short channel amorphous In–Ga–Zn–O (a-IGZO) thin-film transistor (TFT) arrays fabricated using manufacturable processes was investigated. This work shows that the fabricated TFT arrays are acceptable and stable enough for manufacturing of the ultra high definition (UHD) active matrix liquid crystal displays in size larger than 55 in. We observed that studied a-IGZO TFT arrays obeyed the Meyer–Neldel (MN) rule over a broad range of gate bias voltages. The MN rule and exponential subgap density of states (DOS) model were combined to extract the DOS distribution for the investigated a-IGZO TFT arrays. The results were consistent with the previous works on single a-IGZO TFTs. This study demonstrates that this method of DOS extraction can be applied to both single devices and arrays, and is reproducible from lab to lab. We believe that this approach of DOS extraction is useful for further development of UHD flat panel display technology.