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HARVARD Citation
Ha, N. et al. (n.d.). Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A. Japanese journal of applied physics. p. . [Online].
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Ha, N. et al. (n.d.). Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A. Japanese journal of applied physics. p. . [Online].