Cite
HARVARD Citation
Nishida, S. et al. (n.d.). Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si. Japanese journal of applied physics. p. . [Online].
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Nishida, S. et al. (n.d.). Correlation between the electrical properties of p-Si/n-4H-SiC junctions and concentrations of acceptors in Si. Japanese journal of applied physics. p. . [Online].