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HARVARD Citation
Liang, J. et al. (n.d.). Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding. Japanese journal of applied physics. p. . [Online].
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Liang, J. et al. (n.d.). Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding. Japanese journal of applied physics. p. . [Online].