Cite
HARVARD Citation
Takei, Y. et al. (n.d.). Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors. Japanese journal of applied physics. p. . [Online].
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Takei, Y. et al. (n.d.). Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors. Japanese journal of applied physics. p. . [Online].