Cite
HARVARD Citation
Kim, J. et al. (2021). Defect‐Engineered n‐Doping of WSe2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors. Advanced materials interfaces. 8 (14), p. n/a. [Online].
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Kim, J. et al. (2021). Defect‐Engineered n‐Doping of WSe2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors. Advanced materials interfaces. 8 (14), p. n/a. [Online].