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HARVARD Citation
Kuzuhara, M. et al. (n.d.). AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation. Japanese journal of applied physics. p. . [Online].
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Kuzuhara, M. et al. (n.d.). AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation. Japanese journal of applied physics. p. . [Online].