A chemisorbed interfacial layer for seeding atomic layer deposition on graphite. Issue 28 (13th July 2021)
- Record Type:
- Journal Article
- Title:
- A chemisorbed interfacial layer for seeding atomic layer deposition on graphite. Issue 28 (13th July 2021)
- Main Title:
- A chemisorbed interfacial layer for seeding atomic layer deposition on graphite
- Authors:
- Brown, Anton
Greenwood, John
Lockhart de la Rosa, César J.
Rodríguez González, Miriam C.
Verguts, Ken
Brems, Steven
Zhang, Haodong
Hirsch, Brandon E.
De Gendt, Stefan
Delabie, Annelies
Caymax, Matty
Teyssandier, Joan
De Feyter, Steven - Abstract:
- Abstract : Chemisorbed molecular layers are used as sacrificial layers for growing uniform and high-quality dielectric layers on graphite and graphene. Abstract : The integration of graphene, and more broadly two-dimensional materials, into devices and hybrid materials often requires the deposition of thin films on their usually inert surface. As a result, strategies for the introduction of surface reactive sites have been developed but currently pose a dilemma between robustness and preservation of the graphene properties. A method is reported here for covalently modifying graphitic surfaces, introducing functional groups that act as reactive sites for the growth of high quality dielectric layers. Aryl diazonium species containing tri-methoxy groups are covalently bonded (grafted) to highly oriented pyrolytic graphite (HOPG) and graphene, acting as seeding species for atomic layer deposition (ALD) of Al2 O3, a high-κ dielectric material. A smooth and uniform dielectric film growth is confirmed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurements. Raman spectroscopy showed that the aryl groups gradually detach from the graphitic surface during the Al2 O3 ALD process at 150 °C, with the surface reverting back to the original sp 2 -hybridized state and without damaging the dielectric layer. Thus, the grafted aryl groups can act as a sacrificial seeding layer after healing the defects of the graphitic surface with annealing treatment.
- Is Part Of:
- Nanoscale. Volume 13:Issue 28(2021)
- Journal:
- Nanoscale
- Issue:
- Volume 13:Issue 28(2021)
- Issue Display:
- Volume 13, Issue 28 (2021)
- Year:
- 2021
- Volume:
- 13
- Issue:
- 28
- Issue Sort Value:
- 2021-0013-0028-0000
- Page Start:
- 12327
- Page End:
- 12341
- Publication Date:
- 2021-07-13
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d0nr06959k ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 18332.xml