Fabrication of InSb crystal via Horizontal Bridgman method and investigation on its thermoelectric properties. (October 2021)

• Record Type: Journal Article
• Authors: Jin, Min; Bai, Xudong; Tang, Ziqi; Zhao, Su; Chen, Yuqi; Zhou, Lina; Peng, Yan; Chen, Xiufei; Xu, Xiangang
• Is Part Of: Materials research bulletin. Volume 142(2021)
• Publication Date: 2021-10
• Subjects: A. InSb crystal -- B. Horizontal Bridgman method -- C. Thermoelectric -- D. Figure of merit; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2021.111411
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: InSb crystal is prepared through a Horizontal Bridgman method. The largest Seebeck coefficient S is −180.2 μVK -1 near 700 K. The lowest total thermal conductivity ktot is about 8.2 Wm -1 K -1 . A maximum figure of merit ZT = 0.63 is obtained around 700 K. Abstract: In this work, an undoped Ⅲ-Ⅴ group InSb crystal was prepared through a Horizontal Bridgman method. The as-grown crystal has standard F43 m phase structure and precise stoichiometric ratio at room temperature. Its electrical and thermal transport properties along (110) cleavage plane has been investigated. The electrical conductivity σ is increased from 1224.6 Scm −1 to 2282 Scm −1 in the temperature range of 300−700 K. The Seebeck coefficient S is always negative, which means this crystal is a n type semiconductor, and the largest S is −180.2 μVK -1 near 700 K. As for the total thermal conductivity ktot, the lowest value of 8.2 Wm -1 K -1 is achieved under the same temperature. Ultimately, a maximum figure of merit ZT = 0.63 is obtained around 700 K which reveals InSb crystal might be a promising middle- temperature thermoelectric (TE) material for energy conversion application in the future.