1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing. (June 2021)

• Record Type: Journal Article
• Authors: Gonzalo, A.; Stanojević, L.; Fuertes Marrón, D.; Guzman, A.; Hierro, A.; Ulloa, J.M.
• Is Part Of: Solar energy. Volume 221(2021)
• Page Start: 307
• Page End: 313
• Publication Date: 2021-06
• Subjects: Molecular beam epitaxy -- GaAsSbN -- Multi-junction solar cells -- Superlattices -- Rapid thermal annealing -- Short circuit current; Solar energy -- Periodicals; Solar engines -- Periodicals; 621.47
• DOI: 10.1016/j.solener.2021.04.041
• Languages: English
• ISSNs: 0038-092X

Abstract

Graphical abstract: Highlights: A rapid thermal annealing (RTA) cycle enhances the performance of ~1 eV GaAsSbN–based solar cells. The RTA treatment leads to an increasing in RSH, as well as a reduction in J0 and Rs parameters. The RTA process also boosts all solar cell parameters including EQE (503% relative enhancement). The improvements are attributed to reduced densities of clusters and point defects after RTA. Abstract: In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing (RTA) on the performance of ~1 eV GaAsSbN-based solar cells. Different configurations of the dilute nitride material are studied: a bulk quaternary GaAsSbN layer and type-II GaAsSb/GaAsN superlattices (SL) with different period thickness. The RTA treatment leads in both types of structures to an enhanced external quantum efficiency (EQE) and reduced values of the dark saturation current and series resistance. The origin of these improvements is attributed to reduced densities of N and Sb-rich clusters and point defects. Remarkably, all solar cell parameters are substantially improved, this being particularly significant for the short circuit current density ( J SC ) and power conversion efficiency (PCE), the latter with a relative enhancement as high as 500%. The large increment of J SC is an important step towards current–matching in multi–junction solar cells containing GaAsSbN structures.