A cost‐effective fluorination method for enhancing the performance of metal oxide thin‐film transistors. Issue 5 (12th April 2021)

• Record Type: Journal Article
• Authors: Deng, Sunbin; Dong, Shou‐Cheng; Chen, Rongsheng; Zhong, Wei; Li, Guijun; Zhang, Meng; Yeung, Fion Sze Yan; Wong, Man; Kwok, Hoi‐Sing
• Is Part Of: Journal of the Society for Information Display. Volume 29:Issue 5(2021)
• Page Start: 318
• Page End: 327
• Publication Date: 2021-04-12
• Subjects: fluorination -- metal oxide -- planarization -- thin‐film transistor; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.1013
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: Fluorination is a common technique for enhancing the performance of metal oxide (MO) thin‐film transistors (TFTs). However, it usually requires extra processing steps under harsh conditions and brings about a high thermal budget. This work reports a mild fluorination method for MO TFTs using a fluorinated polyimide (F‐PI) in an industry‐standard planarization (PLN) process. During the thermal curing of the F‐PI, fluorine‐containing fragments diffused into MO channels and significantly improved the electrical performance of MO‐TFTs. Channel fluorination was observed in both bottom‐ and top‐gated devices, exemplifying the effectiveness of this method. A 2.2‐in., monochrome AMOLED prototype display was fabricated using the fluorinated MO TFTs. This method provides a mild and low‐thermal‐budget fluorination technique and is useful for the cost‐effective production of active‐matrix flat‐panel display panels. Abstract : Fluorination is a common technique for enhancing the performance of metal oxide (MO) thin‐film transistors (TFTs). In this work, we adopted a fluorinated polyimide in the planarization process of both bottom‐ and top‐gated MO TFTs and achieved channel fluorination under mild conditions. This method is useful for the cost‐effective production of active‐matrix flat‐panel display panels.