Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory. (29th December 2014)

• Record Type: Journal Article
• Authors: Yang, Hongxin; Shi, Luping; Zhao, Rong; Lee, Hock Koon; Li, Jianming; Lim, Kian Guan; Ng, Lung Tat; Chong, Tow Chong
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 3(2015)
• Page Start: N13
• Page End: N17
• Publication Date: 2014-12-29
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0091503jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Lateral PCM is one structure with good thermal confinement and low RESET current. Ideal growth-dominant (GD) phase change material is needed for lateral Phase change memory (PCM). We propose the concept of GD superlattice-like (SLL) phase change structure. GeTe and Sb7 Te3 were selected to form the GD SLL structure. Crystallization temperature and resistivity of GeTe and Sb7 Te3 were thickness dependent. The crystallization temperature of GeTe/Sb7 Te3 SLL phase change structure increase with increasing thickness ratio of GeTe/Sb7 Te3. GeTe/Sb7 Te3 SLL structure built with a thickness ratio of 1.6:1 (GeTe to Sb7 Te3 ) exhibited the lowest melting temperature compared to other thickness ratio. For a typical lateral PCM employing such GeTe/Sb7 Te3 SLL phase change structure, stable SET/RESET operations with a low RESET current of 1.5 mA, SET and RESET speed of 30 nanoseconds, a good endurance above 10 6 cycles and a high RESET/SET resistance ratio window of 20 were achieved, demonstrating strong potentials in next generation non-volatile memory application.