Cite
HARVARD Citation
Jung, Y. et al. (2018). Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films. Materials science in semiconductor processing. pp. 207-213. [Online].
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Jung, Y. et al. (2018). Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films. Materials science in semiconductor processing. pp. 207-213. [Online].