Cite
HARVARD Citation
Magnier, F. et al. (2019). Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests. Microelectronics and reliability. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Magnier, F. et al. (2019). Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests. Microelectronics and reliability. p. . [Online].