Cite
HARVARD Citation
Canato, E. et al. (2019). ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. Microelectronics and reliability. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Canato, E. et al. (2019). ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. Microelectronics and reliability. p. . [Online].