6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process. (October 2018)

• Record Type: Journal Article
• Authors: Garcia-Inza, M.; Cassani, M.; Carbonetto, S.; Casal, M.; Redín, E.; Faigón, A.
• Is Part Of: Radiation measurements. Volume 117(2018:Oct.)
• Page Start: 63
• Page End: 69
• Publication Date: 2018-10
• Subjects: MOSFET -- In-vivo dosimetry -- Radiotherapy -- CMOS; Nuclear emulsions -- Periodicals; Particle tracks (Nuclear physics) -- Periodicals; Thermoluminescence -- Periodicals; Cosmic rays -- Periodicals; Radiation -- Measurement -- Periodicals; Radiometry -- Periodicals; Radiation Monitoring -- Periodicals; Émulsions nucléaires -- Périodiques; Particules (Physique nucléaire) -- Traces -- Périodiques; Thermoluminescence -- Périodiques; Rayonnement cosmique -- Périodiques; Radiométrie -- Périodiques; 539.77
• DOI: 10.1016/j.radmeas.2018.07.009
• Languages: English
• ISSNs: 1350-4487

Abstract

Abstract: This paper presents the characterization of a thick gate oxide MOSFET for radiotherapy in-vivo dosimetry. The device is an N-channel transistor fabricated in a standard CMOS process using the Field Oxide as gate insulator. Sensitivity, fading, gate bias voltage dependence, percentage depth dose and angular response were assessed using a 6 MV LINAC. Experimental results showed that it is possible to estimate dose with a 3% uncertainty in a range up to 85 Gy with an average sensitivity of 62 mV/Gy. The measurement system noise equivalent dose is 3 mGy. Highlights: A thick gate oxide MOSFET for radiotherapy in-vivo dosimetry was characterized. The device was fabricated in a CMOS standard process. Sensitivity, fading, PDD and angular response were assessed. The obtained dose range was 85 Gy with an average sensitivity of 62 mV/Gy.