Artificial synapses with photoelectric plasticity and memory behaviors based on charge trapping memristive system. (March 2020)

• Record Type: Journal Article
• Authors: Chen, Zhiliang; Yu, Yu; Jin, Lufan; Li, Yifan; Li, Qingyan; Li, Tengteng; Zhang, Yating; Dai, Haitao; Yao, Jianquan
• Is Part Of: Materials & design. Volume 188(2020)
• Publication Date: 2020-03
• Subjects: Photoelectric memristor -- Artificial synapse -- Space charge limited current -- Excitatory postsynaptic current; Materials -- Periodicals; Engineering design -- Periodicals; Matériaux -- Périodiques; Conception technique -- Périodiques; Electronic journals; 620.11
• DOI: 10.1016/j.matdes.2019.108415
• Languages: English
• ISSNs: 0264-1275

Abstract

Abstract: Imitation of memory and learning behaviors of nervous system by nanoscale photoelectric devices is highly desirable for building neuromorphic systems or even artificial neural networks. In this work, artificial synapses with photoelectric plasticity and memory behaviors based on a charge trapping memristive system was fabricated. Versatile synaptic functions, such as photoelectric excitatory postsynaptic current behavior, short-term memory, long-term memory, short - to long-term memory transition, and photonic learning and forgetting behaviors, were all mimicked by applied pulses of light and electricity. Moreover, the device also has the potential to be used in flexible applications. The photoelectric plasticity and memory phenomenon can be attributed to charge trapping and detrapping, since the used CdSe/ZnS quantum dots with a quantum well structure that act as trapping centers. This work provides a cost-effective method to develop artificial synapse devices, neural networks, and computers with photoelectric operations. Graphical abstract: Unlabelled Image Highlights: Artificial synapses based on CdSe/ZnS quantum dots and CsPbBr3 quantum dots was fabricated. Photoelectric synaptic plasticity and memory behaviors were mimicked by applied pulses of light and electricity. The quantum well structure of CdSe/ZnS act as the trapping centers, playing role for the plasticity and memory behaviors. Bending tests show the device possesses an excellent mechanical flexibility.