Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors. Issue 29 (19th July 2021)

• Record Type: Journal Article
• Authors: Sosorev, Andrey Yu.; Parashchuk, Olga D.; Tukachev, Nikita V.; Maslennikov, Dmitry R.; Dominskiy, Dmitry I.; Borshchev, Oleg V.; Polinskaya, Marina S.; Skorotetcky, Maxim S.; Kharlanov, Oleg G.; Paraschuk, Dmitry Yu.
• Is Part Of: Physical chemistry chemical physics. Volume 23:Issue 29(2021)
• Page Start: 15485
• Page End: 15491
• Publication Date: 2021-07-19
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/d1cp01599k
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : We suggest a novel strategy for reduction of the dynamic disorder and hence increase of charge-carrier mobility in organic semiconductors: strengthening of intermolecular interactions via tuning the molecular electrostatic potential. Abstract : Dynamic disorder manifested in fluctuations of charge transfer integrals considerably hinders charge transport in high-mobility organic semiconductors. Accordingly, strategies for suppression of the dynamic disorder are highly desirable. In this study, we suggest a novel promising strategy for suppression of dynamic disorder—tuning the molecular electrostatic potential. Specifically, we show that the intensities of the low-frequency (LF) Raman spectra for crystalline organic semiconductors consisting of π-isoelectronic small molecules ( i.e. bearing the same number of π electrons)—benzothieno[3, 2- b ][1]benzothiophene (BTBT), chrysene, tetrathienoacene (TTA) and naphtho[1, 2- b :5, 6- b ′]dithiophene (NDT)—differ significantly, indicating significant differences in the dynamic disorder. This difference is explained by suppression of the dynamic disorder in chrysene and NDT because of stronger intermolecular electrostatic interactions. As a result, guidelines for the increase of the crystal rigidity for the rational design of high-mobility organic semiconductors are suggested.