Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers. (27th July 2021)

• Record Type: Journal Article
• Authors: Biswas, Mohammad Mostafizur Rahman; Hossain, Md. Faruk; Okada, Hiroyuki
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 8(2021)
• Publication Date: 2021-07-27
• Subjects: Quantum dot light emitting diode (QLED) -- ZnCuInS/ZnS quantum dots -- Non-stoichiometric ZnO -- Sputtering -- Inverted structure.; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac1129
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The performance of the Cd-free quantum-dot light-emitting diode was investigated using un-doped and non-stoichiometric sputtered ZnO. Highly conductive metallic ZnO was sputtered with the presence of pure argon (Ar) gas, where the thickness was varied to enhance the structural, morphological, and electrical properties. The electrical properties of the fabricated ZnO were measured using the Hall measurement technique. Consequently, the device performance was validated by the mobility and carrier concentration of the sputtered ZnO film. In addition, from the X-ray diffraction analysis, it was confirmed that the ZnO film was grown on c (002)-axis orientation, parallel to the substrate surface. The morphological properties were also observed using a field-emission-scanning electron microscope to integrate with the crystalline growth conditions of XRD analysis. The external quantum efficiency of 1.02% and current efficiency of 1.86 cd A −1 were achieved with the mobility of 15.1 cm 2 V −1 s −1 and carrier concentration of 2.94 × 10 20 cm −3 of the ZnO film.