Assessment of Surface Preparation Methods for Mercury (Hg) Probe Schottky Capacitance-Voltage (MCV) on Epitaxial Silicon. (29th July 2021)

• Record Type: Journal Article
• Authors: Sanna, Cristina; Taylor, Patrick; Hillard, Robert; Frey, Samuel; McDonald, Dan; Hoglund, Jonny; Zsakai, Gyula; Marton, Attila; Horvath, Peter
• Is Part Of: ECS journal of solid state science and technology. Volume 10:Number 7(2021)
• Publication Date: 2021-07-29
• Subjects: Schottky Diode -- Mercury CV -- Epitaxial Wafers -- Capacitance-Voltage measurement; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac164f
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Mercury probe (Hg-probe) Schottky capacitance-voltage (CV) is widely used for carrier density and resistivity profiling in silicon epitaxial layers. Preparation of the silicon surface is crucial for obtaining high-quality CV measurements. There are a variety of methods currently being used to treat bare silicon epitaxial and polished bulk surfaces in preparation for Hg-Schottky CV measurements. The treatments include wet chemical and dry treatments. Usually, the treatment can be the limiting factor for both the measurement time and quality. In this evaluation, a number of typical treatments are evaluated for P-Type Epitaxial silicon surfaces. A novel concept for treating surfaces has also been investigated, which involves placing a silicon wafer in a chamber where it is exposed to a thermal and optimized ambient. This pretreatment chamber is referred to as PTC. A physics-based assessment of the typical P-type silicon surface treatments is made and presented.