Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon. (2nd August 2021)

• Record Type: Journal Article
• Authors: Wagenpfeil, M.; Ziegler, T.; Schneider, J.; Fieguth, A.; Murra, M.; Schulte, D.; Althueser, L.; Huhmann, C.; Weinheimer, C.; Michel, T.; Anton, G.; Adhikari, G.; Al Kharusi, S.; Angelico, E.; Arnquist, I.J.; Badhrees, I.; Bane, J.; Beck, D.; Belov, V.; Bhatta, T.; Bolotnikov, A.; Breur, P.A.; Brodsky, J.P.; Brown, E.; Brunner, T.; Caden, E.; Cao, G.F.; Chambers, C.; Chana, B.; Charlebois, S.A.; Chernyak, D.; Chiu, M.; Cleveland, B.; Craycraft, A.; Daniels, T.; Darroch, L.; Der Mesrobian-Kabakian, A.; de St. Croix, A.; Deslandes, K.; DeVoe, R.; Di Vacri, M.L.; Dolinski, M.J.; Echevers, J.; Elbeltagi, M.; Fabris, L.; Fairbank, D.; Fairbank, W.; Farine, J.; Ferrara, S.; Feyzbakhsh, S.; Gallina, G.; Gautam, P.; Giacomini, G.; Gingras, C.; Goeldi, D.; Gorham, A.; Gornea, R.; Gratta, G.; Hansen, E.V.; Hardy, C.A.; Harouaka, K.; Heffner, M.; Hoppe, E.W.; House, A.; Hughes, M.; Iverson, A.; Jamil, A.; Jewell, M.; Karelin, A.; Kaufman, L.J.; Krücken, R.; Kuchenkov, A.; Kumar, K.S.; Lan, Y.; Larson, A.; Leach, K.G.; Leonard, D.S.; Li, G.; Li, S.; Li, Z.; Licciardi, C.; Lindsay, R.; MacLellan, R.; Martel-Dion, P.; Massacret, N.; McElroy, T.; Medina Peregrina, M.; Mong, B.; Moore, D.C.; Murray, K.; Nattress, J.; Natzke, C.R.; Newby, R.J.; Nolet, F.; Nusair, O.; Nzobadila Ondze, J.C.; Odgers, K.; Odian, A.; Orrell, J.L.; Ortega, G.S.; Ostrovskiy, I.; Overman, C.T.; Parent, S.; Piepke, A.; Pocar, A.; Pratte, J.-F.; Raguzin, E.; Ramonnye, G.J.; Rasiwala, H.; Rescia, S.; Retière, F.; Richard, C.; Richman, M.; Ringuette, J.; Robinson, A.; Rossignol, T.; Rowson, P.C.; Roy, N.; Saldanha, R.; Sangiorgio, S.; Soma, A.K.; Spadoni, F.; Stekhanov, V.; Stiegler, T.; Tarka, M.; Thibado, S.; Tidball, A.; Todd, J.; Totev, T.; Triambak, S.; Tsang, R.; Vachon, F.; Veeraraghavan, V.; Viel, S.; Vivo-Vilches, C.; Walent, M.; Wichoski, U.; Worcester, M.; Wu, S.X.; Xia, Q.; Yan, W.; Yang, L.; Zeldovich, O.;
• Is Part Of: Journal of instrumentation. Volume 16:Number 8(2021)
• Publication Date: 2021-08-02
• Subjects: Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc) -- Photon detectors for UV, visible and IR photons (solid-state); Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/16/08/P08002
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.