Cite
HARVARD Citation
Chawla, T. et al. (2021). Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor. Microelectronics journal. p. . [Online].
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Chawla, T. et al. (2021). Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor. Microelectronics journal. p. . [Online].