Input-resistance reduced gm-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication. (August 2021)

• Record Type: Journal Article
• Authors: Chong, Joseph; Pour, Fariborz Lohrabi; Ha, Dong Sam
• Is Part Of: Microelectronics journal. Volume 114(2021)
• Publication Date: 2021-08
• Subjects: gm -boosted -- gm-boosted common-gate amplifier (GBCG) optical communications -- Optical receiver -- Transimpedance amplifier (TIA); Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2021.105155
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This paper proposes a transimpedance amplifier (TIA) for a 100 Gb/s optical receiver. The proposed TIA adopts a g m -boosted common-gate input stage with a diode-connected transistor, which lowers the input resistance resulting in a high input pole frequency. It was designed and fabricated in 32 nm CMOS SOI technology. Measurement results indicate that the TIA achieves a bandwidth of 74 GHz and a transimpedance gain of 26 dBΩ while dissipating 16.5 mW under 1.5 V supply voltage. The bandwidth of the proposed TIA is larger by 48% or more when compared with state-of-the art TIAs.