Cite
HARVARD Citation
Wangkheirakpam, V. et al. (2021). Noise behavior of vertical tunnel FETs under the influence of interface trap states. Microelectronics journal. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Wangkheirakpam, V. et al. (2021). Noise behavior of vertical tunnel FETs under the influence of interface trap states. Microelectronics journal. p. . [Online].