Controlled Synthesis of Ultrathin 2D β‐In2S3 with Broadband Photoresponse by Chemical Vapor Deposition. (1st August 2017)

• Record Type: Journal Article
• Authors: Huang, Wenjuan; Gan, Lin; Yang, Haotian; Zhou, Nan; Wang, Renyan; Wu, Wanhui; Li, Huiqiao; Ma, Ying; Zeng, Haibo; Zhai, Tianyou
• Is Part Of: Advanced functional materials. Volume 27:Number 36(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08-01
• Subjects: 2D -- broadband -- chemical vapor deposition -- In2S3 -- photoresponse; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201702448
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : β‐In2 S3 is a natural defective III–VI semiconductor attracting considerable interests but lack of efficient method for its 2D form fabrication. Here, for the first time, this paper reports controlled synthesis of ultrathin 2D β‐In2 S3 flakes via a facile space‐confined chemical vapor deposition method. The natural defects in β‐In2 S3 crystals, clearly revealed by optical spectra and optoelectronic measurement, strongly modulate the (opto)‐electronic of as‐fabricated β‐In2 S3 and render it a broad detection range from visible to near‐infrared. Particularly, the as‐fabricated β‐In2 S3 photodetector shows a high photoresponsivity of 137 A W −1, a high external quantum efficiency of 3.78 × 10 4 %, and a detectivity of 4.74 × 10 10 Jones, accompanied with a fast rise and decay time of 6 and 8 ms, respectively. In addition, an interesting linear response to the testing power intensities range is observed, which can also be understood by the presence of natural defects. The unique defective structure and intrinsic optical properties of β‐In2 S3, together with its controllable growth, endow it with great potential for future applications in electronics and optoelectronics. Abstract : High‐quality ultrathin 2D β‐In2 S3 flakes are synthesized for the first time by space‐confined chemical vapor deposition. The native intrinsic defects in β‐In2 S3 crystals strongly enhance the performance of the as‐fabricated β‐In2 S3 photodetector toward broad range detection from visible to near‐infrared light. This study will pave the way for large‐scale application of In2 S3 in optoelectronic fields.