Tunable Tribotronic Dual‐Gate Logic Devices Based on 2D MoS2 and Black Phosphorus. Issue 13 (13th February 2018)

• Record Type: Journal Article
• Authors: Gao, Guoyun; Wan, Bensong; Liu, Xingqiang; Sun, Qijun; Yang, Xiaonian; Wang, Longfei; Pan, Caofeng; Wang, Zhong Lin
• Is Part Of: Advanced materials. Volume 30:Issue 13(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-13
• Subjects: 2D materials -- triboelectric nanogenerators -- tribotronic logic inverters -- tribotronic transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201705088
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: With the Moore's law hitting the bottleneck of scaling‐down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self‐powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual‐gate logic device based on a MoS2 field‐effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm –1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low‐power‐consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human–machine interfacing, data processing and transmission. Abstract : A tunable tribotronic dual‐gate logic device based on a MoS2 field‐effect transistor, black phosphorus transistors, and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and inverters without applying gate voltages. Tunable electrical behaviors of the inverters are also realized, including tunable gains and power consumptions.