Investigation of C60 fullerenes modified g-GaN monolayer based on DFT study. (September 2021)
- Record Type:
- Journal Article
- Title:
- Investigation of C60 fullerenes modified g-GaN monolayer based on DFT study. (September 2021)
- Main Title:
- Investigation of C60 fullerenes modified g-GaN monolayer based on DFT study
- Authors:
- Shen, Pengfei
Li, Enling
Zheng, Yanpeng
Zhang, Lin
Zhao, Hongyuan
Ma, Deming
Cui, Zhen - Abstract:
- Abstract: We present a comprehensive investigation of C60 fullerenes modified g-GaN monolayer (g-GaN/C60 heterostructure) based on density functional theory (DFT). The results show that the g-GaN/C60 heterostructure is most stable when the pentagonal center of C60 molecule is adsorbed above N atom of the g-GaN monolayer. The heterostructure has a narrow direct energy gap 1.02 eV and type-II band alignment, the CBM is dominated by the C 2p orbital of the C60 molecule, as well as the VBM consists of N 2p and Ga 3d orbitals of the g-GaN monolayer. This results in the separation of electrons and holes reducing the complexation of electrons and holes, improving photoelectric conversion efficiency and photocatalytic performance of the g-GaN monolayer. In addition, the broader UV to visible-light absorption spectrum of the g-GaN/C60 heterostructure promises a potential application in photoelectric devices, especially for solar cells. The electronic and photoresponse properties of the g-GaN/C60 heterostructure applied with vertical electric field are more excellent due to better transitions of electrons from the valence band to conduction band. Highlights: The physical properties of g-GaN/C60 heterostructure have been systematically explored. The heterostructure has a type-II band alignment, this result in improving the performance of the g-GaN monolayer. The g-GaN/C60 heterostructure has a broader absorption spectrum from ultraviolet to visible-light. The physical properties of theAbstract: We present a comprehensive investigation of C60 fullerenes modified g-GaN monolayer (g-GaN/C60 heterostructure) based on density functional theory (DFT). The results show that the g-GaN/C60 heterostructure is most stable when the pentagonal center of C60 molecule is adsorbed above N atom of the g-GaN monolayer. The heterostructure has a narrow direct energy gap 1.02 eV and type-II band alignment, the CBM is dominated by the C 2p orbital of the C60 molecule, as well as the VBM consists of N 2p and Ga 3d orbitals of the g-GaN monolayer. This results in the separation of electrons and holes reducing the complexation of electrons and holes, improving photoelectric conversion efficiency and photocatalytic performance of the g-GaN monolayer. In addition, the broader UV to visible-light absorption spectrum of the g-GaN/C60 heterostructure promises a potential application in photoelectric devices, especially for solar cells. The electronic and photoresponse properties of the g-GaN/C60 heterostructure applied with vertical electric field are more excellent due to better transitions of electrons from the valence band to conduction band. Highlights: The physical properties of g-GaN/C60 heterostructure have been systematically explored. The heterostructure has a type-II band alignment, this result in improving the performance of the g-GaN monolayer. The g-GaN/C60 heterostructure has a broader absorption spectrum from ultraviolet to visible-light. The physical properties of the g-GaN/C60 heterostructure applied with vertical electric field are more excellent. … (more)
- Is Part Of:
- Vacuum. Volume 191(2021)
- Journal:
- Vacuum
- Issue:
- Volume 191(2021)
- Issue Display:
- Volume 191, Issue 2021 (2021)
- Year:
- 2021
- Volume:
- 191
- Issue:
- 2021
- Issue Sort Value:
- 2021-0191-2021-0000
- Page Start:
- Page End:
- Publication Date:
- 2021-09
- Subjects:
- Density functional theory (DFT) -- g-GaN -- C60 molecule -- Electronic structure
Vacuum -- Periodicals
621.55 - Journal URLs:
- http://www.elsevier.com/journals ↗
http://www.sciencedirect.com/science/journal/0042207X ↗ - DOI:
- 10.1016/j.vacuum.2021.110356 ↗
- Languages:
- English
- ISSNs:
- 0042-207X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9139.000000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 17578.xml