Van der Waals Heterostructures: Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures (Adv. Mater. 29/2021). Issue 29 (20th July 2021)

• Record Type: Journal Article
• Authors: Park, Soohyung; Wang, Haiyuan; Schultz, Thorsten; Shin, Dongguen; Ovsyannikov, Ruslan; Zacharias, Marios; Maksimov, Dmitrii; Meissner, Matthias; Hasegawa, Yuri; Yamaguchi, Takuma; Kera, Satoshi; Aljarb, Areej; Hakami, Mariam; Li, Lain‐Jong; Tung, Vincent; Amsalem, Patrick; Rossi, Mariana; Koch, Norbert
• Is Part Of: Advanced materials. Volume 33:Issue 29(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-07-20
• Subjects: 2D semiconductors -- charge transfer -- electron–phonon coupling -- molecular dopants -- MoS 2 -- photoelectron spectroscopy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202170229
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The amount of charge transfer between components of a van der Waals heterostructure to reach the electronic ground state can exhibit a strong temperature dependence. In article number 2008677, Mariana Rossi, Norbert Koch, and co‐workers experimentally observe that the amount of ground‐state charge transfer in a van der Waals heterostructure formed by monolayer MoS2 sandwiched between graphite and a molecular electron‐acceptor layer increases by a factor of 3 when going from 7 K to room temperature.