Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments. (19th July 2021)

• Record Type: Journal Article
• Authors: Wong, Matthew S.; Back, Joonho; Hwang, David; Lee, Changmin; Wang, Jianfeng; Gandrothula, Srinivas; Margalith, Tal; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.
• Is Part Of: Applied physics express. Volume 14:Number 8(2021)
• Publication Date: 2021-07-19
• Subjects: microLED -- III-nitride -- tunnel junction -- GaN -- InGaN -- LED -- InGaN devices; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac1230
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: High wall-plug efficiency (WPE) micro-light-emitting diodes with metalorganic chemical vapor deposition-grown tunnel junction (TJ) contacts are demonstrated. By employing chemical treatments before sidewall activation, the 20 × 20 μ m 2 TJ devices resulted in a voltage penalty of 0.2 V at 20 A cm −2, compared to devices with indium-tin oxide (ITO) contacts. Moreover, the enhancement in light output power was more than 40% higher than ITO devices. Hence, the TJ devices yielded the peak external quantum efficiency (EQE) and WPE of 56% and 55%, respectively, indicating the improvements of 64% and 77% in peak EQE and WPE compared to ITO devices.