Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities. Issue 16 (15th August 2021)

• Record Type: Journal Article
• Authors: Peng, Qiqi; Jiang, Xu; Chen, Yifan; Zhang, Wei; Jiang, Jun; Jiang, Anquan
• Is Part Of: Ceramics international. Volume 47:Issue 16(2021)
• Page Start: 22753
• Page End: 22759
• Publication Date: 2021-08-15
• Subjects: Bismuth ferrite thin film -- Ferroelectric polarization -- Domain wall density -- Oxygen vacancy concentration; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2021.04.293
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO3 /SrRuO3 thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO3 /SrRuO3 thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.