Current‐Induced Complementary Doping to Graphene from Hydrogen Silsesquioxane Passivation Layer. Issue 7 (16th May 2021)

• Record Type: Journal Article
• Authors: Wang, Zhongwang; Yuan, Yahua; Liu, Xiaochi; Mizuta, Hiroshi; Sun, Jian
• Is Part Of: Physica status solidi. Volume 15:Issue 7(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-05-16
• Subjects: complementary doping -- current annealing -- graphene -- hydrogen silsesquioxane; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202100151
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Hydrogen silsesquioxane (HSQ) is a high‐resolution negative‐tone e‐beam resist. Apart from that, it also frequently uses a complementary dopant to 2D materials. So far, most of the studies on an HSQ complementary doping process have been performed by electron beam exposure during the device fabrication. Doping induced by post‐treatment after device fabrication has not been investigated. Herein, current annealing is reported as an easy access to induce controlled complementary doping from the capping HSQ to the graphene. Joule heating caused by the current is able to break siliconhydrogen and siliconoxygen bonds in HSQ. Subsequently, hydrogen and oxygen atoms generated are trapped at the HSQ–graphene interface, therefore, n‐type and p‐type doping graphene, respectively. The doping polarity and strength can be controlled by current strength and annealing duration. Abstract : Controlled complementary doping from the capping hydrogen silsesquioxane (HSQ) to the graphene is demonstrated using current annealing. Dissociation of siliconhydrogen and siliconoxygen bonds in HSQ is caused by current‐induced Joule heating to produce hydrogen and oxygen atoms to n‐type and p‐type doping graphene, respectively. The doping polarity and strength are controlled by current density and annealing duration.