Facile Cyclic Voltammetric‐Induced Trimetallic Oxides with Shear‐Wall Structure Exhibiting Advanced Performance in an Asymmetric Pseudocapacitor. Issue 7 (14th April 2021)

• Record Type: Journal Article
• Authors: Gui, Yang; Li, Pengcheng; Chen, Junsong; Fan, Baoan; Blackwood, Daniel John
• Is Part Of: Energy technology. Volume 9:Issue 7(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-04-14
• Subjects: energy storage -- multicomponent systems -- pseudocapacitors -- shear-wall structures -- three-light-emitting diodes; Energy development -- Periodicals; Power resources -- Periodicals; 333.79
• DOI: 10.1002/ente.202001136
• Languages: English
• ISSNs: 2194-4288

Abstract

Abstract : Recently, a multicomponent system in the electrochemical energy‐storage field exhibits advantages of both electrochemical activity and electronic conductivity due to its synergistic effects. Herein, a trimetallic oxide thin film of Ni−Mn−Fe is obtained through a facile cyclic voltammetric electrodeposition method. The obtained thin film is grown vertically on Ni substrate to form a unique nanosheet morphology with shear‐wall structure. This less crystalline structure is beneficial for the observed faster kinetics due to the rational transport channels, avoiding sluggish charge diffusion. This trioxide thin film displays a maximum capacitance of 3950 F g −1 at a current density of 1 A g −1, with 1250 F g −1 being obtained at a higher current density of 25 A g −1 and maintaining a capacitance of 865 F g −1 after 10 000 cycles. In addition, by paring this film as a cathode with activated carbon, it delivers a considerable energy density of 194.2 Wh kg −1 at a power density of 0.75 kW kg −1 and still outputs an energy density of 33.2 Wh kg −1 at its highest power density of 19 kW kg −1 . When applied to a practical condition, the cell lights up three red light‐emitting diodes (LEDs). Abstract : A nanofence thin film of trimetallic oxides is obtained by the electrodeposition method. It shows a high capacitance of 1250 F g −1 at a current density of 25 A g −1 and 865 F g −1 even after 10 000 cycles of charge/discharge. It shows a great applicable potential on pseudocapacitive devices and provides a facile method for later scale‐up.