Room Temperature Optical Constants and Band Gap Evolution of Phase Pure M1-VO2 Thin Films Deposited at Different Oxygen Partial Pressures by Reactive Magnetron Sputtering. (2nd January 2014)

• Record Type: Journal Article
• Authors: Jiang, Meng; Li, Yamei; Li, Shaotang; Zhou, Huaijuan; Cao, Xun; Bao, Shanhu; Gao, Yanfeng; Luo, Hongjie; Jin, Ping
• Other Names: Masuda Yoshitake Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2014(2014)
• Publication Date: 2014-01-02
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2014/183954
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Spectroscopic ellipsometry study was employed for phase pure VO2 (M1 ) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO2 (M1 ) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2 (M1 ) thin films rapidly increase with decreasing O2 -Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge ( E 1 ) at varied O2 -Ar ratios are almost the same (~2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition ( E 2 ) decreases from 0.53 to 0.18 eV with decreasing O2 -Ar ratios.