An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications. (25th April 2021)

• Record Type: Journal Article
• Authors: Zhang, Zhi‐Cheng; Li, Yuan; Li, Jiaqiang; Chen, Xu‐Dong; Yao, Bei‐Wei; Yu, Mei‐Xi; Lu, Tong‐Bu; Zhang, Jin
• Is Part Of: Advanced functional materials. Volume 31:Number 28(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-04-25
• Subjects: charge trapping -- direct charge injection -- graphdiyne -- multibit storage -- ultrafast nonvolatile memories; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202102571
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Memory plays a vital role in modern information society. High‐speed and low‐power nonvolatile memory is urgently demanded in the era of big data. However, ultrafast nonvolatile memory with nanosecond‐timescale operation speed and long‐term retention is still unavailable. Herein, an ultrafast nonvolatile memory based on van der Waals heterostructure is proposed, where a charge‐trapping material, graphdiyne (GDY), serves as the charge‐trapping layer. With the band‐engineered heterostructure and excellent charge‐trapping capability of GDY, charges are directly injected into the GDY layer and are persistently captured by the trapping sites in GDY, which result in an ultrafast writing speed (8 ns), a low operation voltage (30 mV), and a long retention time (over 10 4 s). Moreover, a high on/off ratio of 10 6 is demonstrated by this memory, which enables the achievement of multibit storage with 6 discrete storage levels. This device fills the blank of ultrafast nonvolatile memory technology, which makes it a promising candidate for next‐generation high‐speed and low‐power‐consumption nonvolatile memory. Abstract : A novel semi‐floating‐gate nonvolatile memory based on van der Waals heterostructure is proposed, which combines the advantages of ultrafast writing speed (8 ns), low operation voltage (2–30 mV), long retention time (over 10 4 s), and high on/off ratio (10 6 ). This memory device fills the blank of ultrafast nonvolatile memory technology.